maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 120 v continuous forward current i f 400 ma peak repetitive forward current i frm 800 ma peak repetitive reverse current i rrm 600 ma forward surge current, tp=1.0s i fsm 6.0 a forward surge current, tp=1.0s i fsm 1.5 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units bv r i r =50a 120 325 v i r v r =90v 100 na i r v r =90v, t a =150c 100 a v f i f =10ma 0.75 v v f i f =50ma 0.84 v v f i f =100ma 0.90 v v f i f =200ma 1.00 v v f i f =400ma 1.25 v c t v r =0v, f=1.0 mhz 35 pf t rr i r =i f =30ma, rec. to 3.0ma, r l =100 60 ns t rr i r =i f =10ma, rec. to 3.0ma, r l =100 50 ns cmpd5001 cmpd5001s surface mount high current inductive load silicon switching diode sot-23 case central semiconductor corp. tm r3 (23-june 2008) description: the central semiconductor cmpd5001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring extremely high current capability. the following configurations are available: cmpd5001 single marking code: da2 cmpd5001s dual, in series marking code: d49
central semiconductor corp. tm sot-23 case - mechanical outline cmpd5001 cmpd5001s surface mount high current inductive load silicon switching diode r3 (23-june 2008) marking code: da2 marking code: d49 cmpd5001 cmpd5001s 1) anode 1) anode d2 2) no connection 2) cathode d1 3) cathode 3) anode d1, cathode d2 2 3 1 d1 d2 2 3 1 lead code: lead code:
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